Technology Application—Guangdong Keyia Semiconductor Technology Co., Ltd.

Chapter 1 Principles and Characteristics of MOS Transistors

§1.1 General introduction of MOS transistors

One,The structure and working principle of MOS field effect transistor	Two, the four types of MOS transistors
Third, the characteristics of MOS field effect transistors

§1.2 The physical basis of MOS transistors

One, The silicon surface of an ideal MOS system under the action of an external field	Two,Surface potential and charge in the space charge region
Three, MOS capacitor	Fourth, the silicon surface of the actual MOS system
Five, the threshold voltage of MOS devices

§1.3 Output characteristics of MOS transistors

1. Qualitative discussion on the output characteristics of MOS transistors

2. MOS transistor current-voltage characteristic equation

§1.4 The main parameters of MOS transistors

1. DC parameters	2. Low-frequency and small-signal parameters
3. The highest frequency of MOS transistor

§1.5 Maximum frequency of MOS transistor

1. The change of conductivity factor with temperature

2. The change of threshold voltage temperature

§1.6 Examples of MOS transistor graphic design

Chapter 2 MOS Inverter and Gate Circuit

§2.1 Resistive load MOS inverter

1. Working principle	2. Load line and working point
3.the impact of different loads on the performance of the inverter

§2.2 E/E MOS inverter

1. Working principle	2. static characteristic analysis
3. transient response	4. MOS inverter design examples

§2.3 E/DMOS inverter

1. Working principle	2. static analysis
3.transient analysis

§2.4 CMOS inverter

1.CMOSInverter principle	2. DC transmission characteristics and noise tolerance
3. transient response	4.power consumption discussion

§2.5 MOS gate circuit and transmission gate

1. Single channel MOS gate circuit	2. CMOS gate circuit
3. MOS transmission gate

Chapter 3 Triggers and other logic components

§3.1 MOS flip-flop

1.R-S trigger	2.J-K flip-flop
3. D flip-flop

§3.2 MOS adder

1. MOS half adder

2. MOS full adder

§3.3 MOS decoder

1. Three-variable decoder

2. eight-segment decoder

§3.4 MOS shift register

1.static shift register

2. dynamic shift register

Chapter 4 Large Scale Integrated Circuits

§4.1 MOS memory

1. Random Access Memory (RAM)

2. Read-only memory (ROM)

§4.2 Charge Coupled Device (CCD)

1. CCD structure and working principle	2. CCD basic parameters and structure improvement
3. CCD application overview

Chapter 5 MOS Integrated Circuit Design and Layout

§5.1 PMOS integrated circuit layout design

1. PMOS circuit device design

2. Layout design

§5.2 CMOS integrated circuit design

1. CMOS circuit device design	2. CMOS layout design summary
3. the design of CMOS threshold voltage

§5.3 Introduction to the basic principles of VLSI design

I. Overview

2. Design principle of scaling down

Chapter 6 MOS Process

§6.1 MOS conventional process

1. PMOS process

2. NMOS process

§6.2 Silicon gate process

1. Main advantages	2. P-channel silicon gate process
3. Equal-planar silicon gate N-channel MOS process

§6.3 Application of ion implantation technology in MOS process

一、离子注入法调整MOS器件的V1. Ion implantation method to adjust VT of MOS device

2. Ion implantation to achieve gate self-alignment

§6.4 Double-layer gate process

1. MNOS process

2. MAOS process

§6.5 CMOS process

1. Basic CMOS process description	2. Manufacture of CMOS circuits by ion implantation
3. SOS technology manufacturing CMOS circuit

§6.6 E/D MOS process

1. Ion implantation method for manufacturing E/DMOS	2. Sio2-AI2O3 double gate E/DMOS
3. Double diffusion method for manufacturing E/DMOS

§6.7 VMOS process

1. Structure and characteristics

2. the main process of VMOS

§6.8 Monitoring method of circuit parameters in production

Electronic Technology Forum

Electronic Technology Forum

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