Describe the detailed analysis of MOS tube high-frequency gain and stability function analysis

Source: Time:2021-4-6

Describe the detailed analysis of MOS tube high-frequency gain and stability function analysis

Here is a description of the function derived from the four-terminal parameter as the standard for high-frequency amplification characteristics.


As a function of high-frequency amplification characteristics, we hope that it has nothing to do with the type of four-terminal parameter. Here are the results of Rollet's research on invariants in the transformation process between immittance parameters such as y and z or mixed parameters such as h and g 8). The following usesimage.pngrepresents a general four-terminal parameter, usingimage.pngTo represent the actual part, useimage.pngrepresents its imaginary part.

Study stability first. At ρ11, ρ22image.png1 under the conditions of, when the device is unconditionally stable (no matter what the extreme conditions of the input and output do not cause oscillation), the stability coefficient of Basil is required

MOS管高频增益函数

(This value can be a value between +∞ and -1) greater than 1. In addition,image.pngimage.pngSometimes it is possible to oscillate depending on the terminal conditions, which is equivalent to conditional stability (potential instability). MOS tube high frequency gain function. When the terminal immittance image.png is added to the input and output,The total stability factor of the entire system is

MOS管高频增益函数

whereimage.png.K is a useful quantity that represents the stability of the tuning amplifier. The stability factor is used by Linvill 9)image.pngand Stern (10) used s (see page 73), etc., and S is not an invariant in parameter substitution.


There are three definitions for the power gain of the amplifying system:


1) Power gainMOS管高频增益函数

MOS管高频增益函数

Where Pi is the input power of the amplifier, and Po is the output power of the amplifier (to the load).


2) Transducer gainimage.png

MOS管高频增益函数

whereimage.png it is the power taken by the signal source.


3) Available power gain (available gain)MOS管高频增益函数

MOS管高频增益函数

whereimage.png is the power taken from the output of the amplifier.


From the definition,image.pngthe immittance value with the signal source,image.pngIt has nothing to do with the immittance value of the load. The three gain expression methods have their own characteristics. For example, the performance of the amplifier connected to the constant signal source (its effective power is also constant, such as antenna, etc.) isimage.png; MOS tube high frequency gain function. The amplifier matches the load, and the output power Po isimage.png time image.png for image.png.byimage.pngthe magnitude relationship of can be obtained by the following inequality:

MOS管高频增益函数

The relationship between these power gains and the four-terminal parameters is as follows.

MOS管高频增益函数

whereimage.pngrespectively, the signal source and load immittance. These gains are also invariant after parameter replacement.

image.pngtime, changeimage.pngmake the input and output conjugate matching at the same time, at this timeimage.pngthe three are the same, take the maximum value and call it the maximum available gainimage.png. Expressed by the following formula:

MOS管高频增益函数

This is a value determined by the device itself, so it is also an invariant ●)

image.pngit can also be written as a formula containing image.png:

MOS管高频增益函数


▏Y21/Y12▕ is also invariant.image.pngWhen adding a lossy terminal to the input and output of the device, K→1. At this time, the entire four-terminal network enters an area of unconditional stability and conditional stability.image.png it becomes ▏Y21/Y12▕. MOS tube high frequency gain function. In this sense, it is called the maximum stable gain (MSG).

image.png

Based on the above reasons, it can be known thatimage.pngthe other parameters indicate that the characteristics of the device itself are more appropriate.

Figure 2.23 is the MAG, MSG and MAG of a typical field effect transistor calculated according to the y parameterimage.pngthe relationship with frequency.It can be seen from the figure that the cascaded gate MOS field effect transistor has good stability.


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