MOS transistor graphic design example structure detailed analysis

MOS transistor version graphic design example

MOS transistor graphics design, manufacturing MOS transistors, first of all, according to the given parameters, design a pattern that meets the requirements. Here is a brief introduction to design a MOS transistor pattern according to the requirements of transconductance gm.

 When set threshold voltage ,Transconductance of the tube required gm=。

According to the conditions, the designed MOS transistor is an N-channel enhancement type device, and the given ga is the saturation region transconductance. The graphic design here comes down to determining the width-to-length ratio of the device channel。

According to the transconductance formula in the saturation region:

The aspect ratio of the device can be written as:

If take：

Obtainable：

Substituting the above values, the width-to-length ratio of the device is calculated as:

If the channel length L is 8 μm, then W is 64 μm.

Therefore, according to the determined aspect ratio, the layout shown in Figure 1-41 (a) can be drawn. In the graphic design of MOS transistors, the large square represents the substrate P-Si, and the two long squares on the left and right represent the drain-source N+ area. The gap in the middle is the width and length of the channel. Oxide layer; dotted lines indicate aluminum leads; diagonal lines indicate lead holes. If you cut along the dotted line AA, you can get a cross-sectional view as shown in Figure 1-41 (b).

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